Combines graphene passivation and hBN heat spreading within the HEMT structure to address both surface and thermal limitations, potentially improving device reliability, thermal performance and operating stability.

HEMT devices can experience topographical effects and localised hot spots that lead to uneven heat distribution, potentially degrading device reliability, thermal performance and overall electrical performance.

Provides an enhanced HEMT structure incorporating graphene passivation and a hexagonal boron nitride heat-spreader layer over the electrode and dielectric structure to improve surface performance and heat dissipation.

Combines graphene passivation with an hBN heat-spreader layer in a HEMT structure, addressing both surface-performance and thermal-management challenges within an integrated semiconductor device.